The PEC in aqueous medium at neutral pH with F–SnO 2 as the charge transport layer shows ∼81% increase in the photocurrent density (at 1.6 V versus RHE) and decrease in charge transfer resistance by ∼36%. F–SnO 2 exhibits an increase in electrical conductivity by ∼1–2 orders of magnitude and an increase in electron density by ∼65%, making it suitable as a charge transport layer in photoelectrochemical cells (PECs). The electrical properties of the F–SnO 2 film is examined by impedance spectroscopy analysis. The substitutional fluorine (1.28 at%) in SnO 2 results in remarkable changes in its electronic structure due to the lowering of oxygen defects by ∼80%. The interstitial fluorine (1.21 at%) decays off by a depth of 61 nm in the SnO 2 film. Fluorine is found to occupy interstices and substitutional sites in the SnO 2 lattice. The interaction of the F-TEDA molecule with the SnO 2 surface occurs via N–F bonds. Herein, we elucidate the fluorination of SnO 2 thin films using X-ray photoelectron spectroscopy (XPS) depth profiling. The discovery of electrophilic fluorinating agents such as Selectfluor® (F-TEDA) has led to the development of novel methods for fluorination of metal oxides such as tin oxide (SnO 2) in this work. Recently, there has been substantial interest in the fluorination of nanomaterials-based thin films used in various optoelectronic devices for optimum charge transport across semiconducting layers.
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